Datasheet 3EZ39 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	3EZ39	GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) DATA SHEET 3EZ11~3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriter	Pan Jit International Inc.	diode
2	3EZ39	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 3EZ11 THRU 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typical ID less than 1 A above 11V High temperature s	TRSYS	diode
3	3EZ39	Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic materi	Diotec Semiconductor	diode
4	3EZ39D10	SILICON ZENER DIODES Certificate TH97/10561QM Certificate TW00/17276EM 3EZ3.9D10 ~ 3EZ200D10 SILICON ZENER DIODES VZ : 3.9 - 200 Volts PD : 3 Watts DO - 41 FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 0.108 (2.	EIC	diode
5	3EZ39D5	SILICON 3 WATT ZENER DIODES	Microsemi Corporation	diode
6	3EZ39D5	3W SILICON ZENER DIODE	Jinan Gude Electronic Device	diode
7	3EZ39D5	SILICON ZENER DIODES 3EZ Series VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. MECHANICAL DATA * Case : DO-41 Molded plastic * E	EIC discrete Semiconductors	diode
8	3EZ39D5	Zener Voltage Regulators 3EZ4.3D5 Series 3 Watt DO−41 SurmeticE 30 Zener Voltage Regulators This is a complete series of 3 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial−lead, transfer−molded pla	ON Semiconductor	regulator

3EZ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	3EZ	SILICON ZENER DIODES 3EZ Series VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current SILICON ZENER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. MECHANICAL DATA * Case : DO-41 Molded plastic * E	EIC discrete Semiconductors	diode
2	3EZ	Diode Zener Single 6.2V 5% 3W 2-Pin DO-41 T/R	New Jersey Semiconductor	diode
3	3EZ1	Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic materi	Diotec Semiconductor	diode
4	3EZ10	Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic materi	Diotec Semiconductor	diode
5	3EZ100	GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) DATA SHEET 3EZ11~3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V • Plastic package has Underwriter	Pan Jit International Inc.	diode
6	3EZ100	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 3EZ11 THRU 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typical ID less than 1 A above 11V High temperature s	TRSYS	diode
7	3EZ100	Silicon-Power-Z-Diodes (non-planar technology) 3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic materi	Diotec Semiconductor	diode
8	3EZ100D10	SILICON ZENER DIODES Certificate TH97/10561QM Certificate TW00/17276EM 3EZ3.9D10 ~ 3EZ200D10 SILICON ZENER DIODES VZ : 3.9 - 200 Volts PD : 3 Watts DO - 41 FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 0.108 (2.	EIC	diode
9	3EZ100D5	SILICON 3 WATT ZENER DIODES	Microsemi Corporation	diode

Esta página es del resultado de búsqueda del 3EZ39. Si pulsa el resultado de búsqueda de 3EZ39 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap