(PDF) 2SK3155 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3155
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3155 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM ADE-208-768C (Z) 4th. Edition Februaty 1999 D G S 123 1. Gate 2. Drain 3. Source 1 page 2SK3155 Body–Drain Diode Reverse Recovery Time 500 di / dt = 50 A / µs 200 VGS = 0, Ta = 25 °C 100 50 20 10 5 0.1 0.2 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 Ciss 300 Coss 100 Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 200 I D = 15A 160 VDD = 100 V 50 V 25 V 120 VGS VDS 80 20 16 12 8 40 VDD = 100 V 50 V 4 25 V 0 0 20 40 60 80 100 Gate Charge Qg (nc) 1000 500 200 100 Switching Characteristics VGS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % t d(off) tf 50 tr 20 t d(on) 10 5 0.1 0.2 0.5 1 2 5 10 Drain Current I D (A) 20 5 5 Page

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PDF 2SK3155 Data sheet ( Hoja de datos )