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Número de pieza | 2SK2838 | |
Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK2838 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! 2SK2838
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2838
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
z Low drain−source ON resistance : RDS (ON) = 0.84 Ω (typ.)
z High forward transfer admittance : |Yfs| = 4.4 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 400 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS 400 V
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
VDGR
VGSS
ID
IDP
PD
EAS
400 V
±30 V
5.5 A
22 A
40 W
223 mJ
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
5.5
4.0
150
−55 to 150
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch−c)
3.125
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
83.3 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Note 3:
VDD = 90 V, Tch = 25°C (initial), L = 12.0 mH, RG = 25 Ω,
IAR = 5.5 A
Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2009-09-29
1 page 2SK2838
RG = 25 Ω
VDD = 90 V, L = 12 mH
EAS
=
1
2
⋅ L ⋅ I2
⋅ ⎜⎛
⎝
BVDSS
BVDSS − VDD
⎟⎞
⎠
5 2009-09-29
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SK2838.PDF ] |
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