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PDF 2SK2359 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2359 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2359/2SK2360
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel
MOS Field Effect Transistor designed for high voltage switching
applications.
FEATURES
• Low On-Resistance
2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A)
2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage(2SK2359/2SK2360) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±7.0
A
Drain Current (pulse)*
ID(pulse) ±28
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 7.0 A
Single Avalanche Energy**
EAS 17 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54 1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO220)
(10.0)
4
4.8 MAX.
1.3 ± 0.2
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
123
(0.5(R0).8R)
0.5 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Source
Document No. TC-2501
(O. D. No. TC-8060)
Date Published February 1995 P
Printed in Japan
© 1995
1 page  
2SK2359/2SK2360
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2.0
ID = 6 A
1.5 3 A
1.0
0.5
0
–50
0
VGS = 10 V
50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
100
Coss
Crss
10
1 10 100 1 000
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
10 V
VGS = 0
1.0
0.1
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
tr
100
10
1.0
0.1
tf
td (on)
td (off)
VDS = 100 V
VGS = 10 V
RG = 25 Ω
1.0 10 100
ID - Drain Current - A
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
10
0.1
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16
ID = 6 A
14
VDD = 400 V VGS
300 250 V 12
125 V
10
200 8
6
100
VDS
4
2
0 10 20 30 40
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2359.PDF ] | |
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