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PDF 2SK2316 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2316 | |
| Descripción | Ultrahigh-Speed Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : EN5300A
N-Channel Silicon MOSFET
2SK2316
Ultrahigh-Speed Switching Applications
Features
• Low ON resistance.
• Ultrahigh-speed switching.
• Low-voltage drive (2.5V drive).
Package Dimensions
unit: mm
2062A-PCP
[2SK2316]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
VDSS
VGSS
ID
IDP
PD
PW≤10µd, duty cycle≤1%
Mounted on ceramic board
(250mm2×0.8mm)
Tc=25°C
Channel Temperature
Tch
Storage Temperature
Tstg
1 : Gate
2 : Drain
3 : Source
SANYO: PCP
(Bottom View)
Ratings
20
±10
2
8
1.5
Unit
V
V
A
A
W
3.5
150
–55 to +150
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
D-S Breakdown Voltage
G-S Breakdown Voltage
Zero-Gate Voltage
Drain Current
V(BR)DSS
V(BR)GSS
IDSS
Gate-to-Source Leakage Current IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance yfs
Static Drain-to-Source
RDS(on)
ON-State Resistance
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance Crss
ID=1mA, VGS=0
IG=±100µA, VDS=0
VDS=16V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=1A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
Unit
min typ max
20 V
±10 V
100 µA
±10 µA
0.5 1.5 V
1.8 2.8
S
140 200 mΩ
200 320 mΩ
170 pF
145 pF
50 pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) TA-0121 No.5300-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SK2316.PDF ] | |
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