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PDF 2SK2158 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2158 | |
| Descripción | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2158
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2158 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2158 is suitable for use in low-voltage
portable systems such as headphone stereo sets and camcorders.
FEATURES
• Capable of drive gate with 1.5 V
• Because of high input impedance, there is no need to
consider driving current.
• Bias resistance can be omitted, enabling reduction in total
number of parts.
PACKAGE DIMENSIONS
(in millimeters)
2.8 ± 0.2
1.5
0.65+–00..115
2
13
Marking
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
EQUIVALENT CIRCUIT
3
Marking: G23
2
Gate protection
diode
Internal
diode
1
PIN CONNECTION
1. Source (S)
2. Gate (G)
3. Drain (D)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms,
Duty Cycle ≤ 50 %
RATINGS
50
±7.0
±0.1
±0.2
200
150
–55 to +150
UNIT
V
V
A
A
mW
˚C
˚C
Document No. D11234EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996
1 page  
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SK2158
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK2158.PDF ] | |
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