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PDF 2SK211 Data sheet ( Hoja de datos )
| Número de pieza | 2SK211 | |
| Descripción | Silicon N Channel Junction Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK211 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
2SK211
FM Tuner Applications
VHF Band Amplifier Applications
Unit: mm
• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
• High forward transfer admitance: |Yfs| = 9 mS (typ.)
• Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDO
IG
PD
Tj
Tstg
Rating
−18
10
150
125
−55~125
Unit
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Marking
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
IGSS
VGS = −0.5 V, VDS = 0 V
V (BR) GDO IG = −100 μA
IDSS
(Note)
VGS = 0 V, VDS = 10 V
VGS (OFF) VDS = 10 V, ID = 1 μA
⎪Yfs⎪
VGS = 0 V, VDS = 10 V, f = 1 kHz
Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz
Crss
VGD = −10 V, f = 1 MHz
GPS
VDD = 10 V, f = 100 MHz (Figure)
NF VDD = 10 V, f = 100 MHz (Figure)
Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA
1
Min Typ. Max Unit
⎯ ⎯ −10 nA
−18 ⎯
⎯
V
1.0 ⎯ 10 mA
−0.4 ⎯ −4.0 V
⎯ 9 ⎯ mS
⎯ 6.0 ⎯ pF
⎯ ⎯ 0.15 pF
⎯ 18 ⎯ dB
⎯ 2.5 3.5 dB
2007-11-01
1 page  
2SK211
5 2007-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK211.PDF ] | |
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