|
|
PDF 2SK1824 Data sheet ( Hoja de datos )
| Número de pieza | 2SK1824 | |
| Descripción | N-CHANNEL MOS FET FOR SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK1824 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1824
N-CHANNEL MOS FET
FOR SWITCHING
The 2SK1824 is a N-channel vertical type MOS FET that is
driven at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SK1824 is ideal for driving the actuator of power-saving systems,
such as VCR cameras and headphone stereo systems.
Moreover, the 2SK1824 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
FEATURES
• Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
• Can be automatically mounted
• Can be directly driven by 3-V IC
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
PACKAGE DIMENSIONS (in mm)
0.3 ± 0.05
0.1
+0.1
–0.05
D
G
0.2
+0.1
–0
S
0.5 0.5
1.0
1.6 ± 0.1
0 to 0.1
0.6
0.75 ± 0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Internal
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: B1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Topt
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms
Duty cycle ≤ 50 %
3.0 cm2 × 0.64 mm, ceramic substrate used
RATING
30
±7
±100
±200
200
150
–55 to +80
–55 to +150
UNIT
V
V
mA
mA
mW
˚C
˚C
˚C
Document No. D11220EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
1 page  
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SK1824
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK1824.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK182 | (2SK180 - 2SK183) Power FET |  Yoshino International |
| 2SK1821 | N-Channel MOSFET Transistor |  Inchange Semiconductor |
| 2SK1821-01M | N-channel MOS-FET |  Fuji Electric |
| 2SK1821-01MR | N-channel MOS-FET | Fuji Electric |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |