(PDF) 2SK1669 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1669
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK1669 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 90 ns) • Suitable for motor control, switching regulator and DC – DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 1 page Body to Drain Diode Reverse Recovery Time 500 200 100 50 20 di/dt = 100 A/µs, VGS = 0 Ta = 25°C, Pulse Test 10 5 0.5 1 2 5 10 20 50 Reverse Drain Current IDR (A) Dynamic Input Characteristics 500 400 VGS = 50V 100 V 200 V 300 VDS 200 VGS 20 16 12 8 100 VDD = 200 V ID = 30 A 4 100 V Pulse Test 50 V 0 0 40 80 120 160 200 Gate Charge Qg (nc) 10,000 1,000 2SK1669 Typical Capacitance vs. Drain to Source Voltage Ciss Coss 100 Crss VGS = 0 f = 1 MHz 10 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 Switching Characteristics 500 td (off) 200 100 tr 50 tf td (on) 20 VGS = 10 V, VDD =.. 30 V PW = 2 µs, duty < 1% 10 5 0.5 1 2 5 10 20 Drain Current ID (A) 50 5 5 Page

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PDF 2SK1669 Data sheet ( Hoja de datos )