(PDF) 2SK1667 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1667
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK1667 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC – DC converter Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 1 page Body to Drain Diode Reverse Recovery Time 500 200 100 50 20 di / dt = 100 A / µs V GS = 0, Ta = 25°C 10 5 0.2 0.5 1 2 5 10 20 Reverse Drain Current IDR (A) 2SK1667 Typical Capacitance vs. Drain Source Voltage 1000 Ciss Coss 100 Crss 10 V GS = 0 f = 1 MHz 1 0 10 20 30 40 Drain to Source Voltage VDS(V) 50 Dynamic Input Characteristics 500 20 ID = 7 A 400 16 V GS 300 V DS 200 200 V 100 V VDD = 50 V 100 0 VDD = 200 V 100 V 50 V 8 16 24 32 Gate Charge Qg (nc) 12 8 4 0 40 Switching Characteristics 500 V GS = 10 V, VDD =.. 30 V PW = 2 µ s, duty 1 % 200 100 td (off) 50 20 tr 10 tf td (on) 5 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 10 5 5 Page

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PDF 2SK1667 Data sheet ( Hoja de datos )