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PDF 2SK1399 Data sheet ( Hoja de datos )
| Número de pieza | 2SK1399 | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK1399 is an N-channel vertical type MOS FET which can be
driven by 2.5-V power supply.
The 2SK1399 is driven by low voltage and does not require consideration
of driving current, it is suitable for appliances including VCR cameras and
headphone stereos which need power saving.
FEATURES
• Can be driven by a 3.0-V power source
• Not necessary to consider driving current because of it is high input
impedance
• Possible to reduce the number of parts by omitting the bias resistor
• Can be used complementary with the 2SJ185
PACKAGE DRAWING (Unit : mm)
2.8 ± 0.2
1.5
0.65
+0.1
–0.15
2
13
Marking
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1399
SC-59 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS 50 V
5 Gate to Source Voltage
VGSS
±7.0
V
Drain Current (DC)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
±100
±200
mA
mA
Total Power Dissipation
PT 200 mW
Channel Temperature
Tch 150 °C
Operating Temperature
Topt –55 to +80 °C
Storage Temperature
Tstg –55 to +150 °C
EQUIVALENT CIRCUIT
Gate
Drain
Electrode
Connection
1.Source
Internal 2.Gate
Diode 3.Drain
Gate
Protection
Diode
Source
Marking: G12
Note PW ≤ 10 ms, Duty Cycle ≤ 50 %
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14770EJ2V0DS00 (2nd edition)
(Previous No.TC-2343)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1991, 2000
1 page  
[MEMO]
2SK1399
Data Sheet D14770EJ2V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK1399.PDF ] | |
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