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PDF 2SK123 Data sheet ( Hoja de datos )
| Número de pieza | 2SK123 | |
| Descripción | Silicon N-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK123 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Silicon Junction FETs (Small Signal)
2SK123
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
s Features
q High mutual conductance gm
q Low noise voltage of NV
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDSO
VDGO
IDSO
IDGO
IGSO
PD
Topr
Tstg
20
20
2
2
2
200
−20 to +80
−55 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
unit: mm
2.4±0.1
5.8−+00..32
1.5−+00..0255
1.9±0.1
1
3
2
1: Drain
2: Source
3: Gate
Mini Flat Package (3-pin)
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Current consumption
Drain to Source cut-off current
ID
IDSS
VD = 4.5V, CO = 10pF, RD = 2.2kΩ ± 1%
VDS = 4.5V, VGS = 0
100
95
600 µA
480 µA
Mutual conductance
Noise figure
Voltage gain
Voltage gain difference
gm
NV
GV1
GV2
GV3
∆|GV2 − GV1|
∆|GV1 − GV3|
VD = 4.5V, VGS = 0, f = 1kHz
VD = 4.5V, RD = 2.2kΩ ± 1%
CO = 10pF, A-curve
VD = 4.5V, RD = 2.2kΩ ± 1%
CO = 10pF, eG = 10mV, f = 1kHz
VD = 12V, RD = 2.2kΩ ± 1%
CO = 10pF, eG = 10mV, f = 1kHz
VD = 1.5V, RD = 2.2kΩ ± 1%
CO = 10pF, eG = 10mV, f = 1kHz
0.7 1.6
4
−3 2
0 3.3
−4.5 − 0.3
0 +3.5
0 +3.5
mS
µV
dB
dB
dB
dB
dB
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK123.PDF ] | |
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