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Número de pieza | 2SD875 | |
Descripción | Silicon NPN epitaxial planer type(For low-frequency power amplification) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD875 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Transistor
2SD875
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB767
Unit: mm
s Features
q Large collector power dissipation PC.
q High collector to emitter voltage VCEO.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1A
Collector current IC 0.5 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : X
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA*2
VCE = 5V, IC = 500mA*2
IC = 300mA, IB = 30mA*2
IC = 300mA, IB = 30mA*2
VCB = 10V, IE = –50mA*2, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
80
80
5
130
50
*1hFE1 Rank classification
Rank
R
hFE1
Marking Symbol
130 ~ 220
XR
S
185 ~ 330
XS
typ max Unit
0.1 µA
V
V
V
330
100
0.2 0.4
V
0.85 1.2
V
120 MHz
11 pF
*2 Pulse measurement
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SD875.PDF ] |
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