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Número de pieza | HM62W8511HI | |
Descripción | 4M High Speed SRAM (512-kword x 8-bit) | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HM62W8511HI (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! HM62W8511HI Series
4M High Speed SRAM (512-kword × 8-bit)
ADE-203-1036A(Z)
Rev. 1.0
Apr. 15, 1999
Description
The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed
circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 36-pin SOJ.
Features
• Single supply : 3.3 V ± 0.3 V
• Access time 15 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current : 130 mA (max)
• TTL standby current : 50 mA (max)
• CMOS standby current : 5 mA (max)
• Center VCC and VSS type pinout
• Temperature range: –40 to 85°C
1 page HM62W8511HI Series
DC Characteristics (Ta = –40 to +85°C, VCC = 3.3 V ± 0.3 V, VSS = 0V)
Parameter
Symbol Min
Input leakage current
IILII
Output leakage current
IILOI
Operation power
supply current
15 ns cycle ICC
—
—
—
Standby power supply 15 ns cycle ISB
current
—
ISB1 —
Typ*1
—
—
—
Max
2
2
130
Unit
µA
µA
mA
— 50 mA
0.05 5
mA
Output voltage
VOL — — 0.4 V
VOH 2.4 — — V
Notes: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.
Test conditions
Vin = VSS to VCC
Vin = VSS to VCC
Min cycle
CS = VIL, lout = 0 mA
Other inputs = VIH/VIL
Min cycle
CS = VIH,
Other inputs = VIH/VIL
f = 0 MHz
VCC ≥ CS ≥ VCC - 0.2 V,
(1) 0 V ≤ Vin ≤ 0.2 V or
(2) VCC ≥ Vin ≥ VCC - 0.2 V
IOL = 8 mA
IOH = –4 mA
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min
Typ
Input capacitance*1
Cin —
—
Input/output capacitance*1
CI/O
—
—
Note: 1. This parameter is sampled and not 100% tested.
Max
6
8
Unit
pF
pF
Test conditions
Vin = 0 V
VI/O = 0 V
5
5 Page Package Dimensions
HM62W8511HJPI Series (CP-36D)
23.25
23.62 Max
36 19
HM62W8511HI Series
Unit: mm
1
0.74
1.30 Max
18
0.43 ± 0.10
0.41 ± 0.08
1.27
0.10
Dimension including the plating thickness
Base material dimension
9.40 ± 0.25
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
CP-36D
Conforms
Conforms
1.4 g
11
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet HM62W8511HI.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM62W8511H | 4M High Speed SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM62W8511HC | 4M High Speed SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM62W8511HCJP-10 | 4M High Speed SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
HM62W8511HCLJP-10 | 4M High Speed SRAM (512-kword x 8-bit) | Hitachi Semiconductor |
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