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PDF HYB3164160T Data sheet ( Hoja de datos )
| Número de pieza | HYB3164160T | |
| Descripción | 4M x 16-Bit Dynamic RAM | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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4M x 16-Bit Dynamic RAM
(4k & 8k Refresh)
HYB 3164160T -50/-60
HYB 3165160T -50/-60
Preliminary Information
• 4 194 304 words by 16-bit organization
• 0 to 70 ˚C operating temperature
• Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
Cycle time:
90 ns (-50 version)
110 ns (-60 version)
CAS access time:
13 ns ( -50 version)
15 ns ( -60 version)
• Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation
max. 396 active mW ( HYB 3164160T-50)
max. 360 active mW ( HYB 3164160T-60)
max. 504 active mW ( HYB 3165160T-50)
max. 432 active mW ( HYB 3165160T-60)
7.2 mW standby (TTL)
720 W standby (MOS)
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh modes
• Fast page mode capability
• 2 CAS / 1 WRITE byte control
• 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164160T)
• 4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165160T)
• Plastic Package: P-TSOPII-54-1 500 mil
Semiconductor Group
5
1 page  
HYB 3164(5)160T-50/-60
4M x 16-DRAM
Block Diagram for HYB 3164160T
Semiconductor Group
9
5 Page 
HYB 3164(5)160T-50/-60
4M x 16-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
TA = 0 to 70 ˚C,VCC = 3.3 ± 0.3V
Parameter
Symbol
HYB
HYB
Unit Note
3164(5)16T-50 3164(5)16T-60
min. max. min. max.
Fast Page Mode Read-Modify-Write
Cycle
Fast page mode read-write cycle time
CAS precharge to WE
tPRWC
tCPWD
71
48
–
–
CAS-before-RAS refresh cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
tCSR
tCHR
tRPC
tWRP
tWRH
5–
10 –
5–
10 –
10 –
CAS-before-RAS counter test cycle
CAS precharge time
tCPT
25 –
Self Refresh Cycle
RAS pulse width
RAS precharge time
CAS hold time
tRASS
tRPS
tCHS
100k
90
-50
–
–
–
80 –
55 –
5–
10 –
5–
10 –
10 –
30 –
100k
110
-50
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
ns 17
17
ns 17
Semiconductor Group
15
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet HYB3164160T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HYB3164160AT | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
| HYB3164160AT-40 | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
| HYB3164160AT-50 | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
| HYB3164160AT-60 | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
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