(PDF) ASI10636 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	ASI10636
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! OSC-0.3C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI OSC-0.3C is Designed for FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC 225 mA VCB PDISS TJ TSTG θJC 25 V 5.0 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 30 OC/W PACKAGE STYLE .138 2L FLG A B C F E D DIM MINIMUM inches / mm MAXIMUM inches / mm A .025 / 0.635 B .138 / 3.505 C .275 / 6.985 D .375 / 9.525 E .031 / 0.787 F .062 / 1.575 ORDER CODE: ASI10636 CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS BVCEO IC = 1.0 mA BVCBO IC = 100 µA IEBO IEB = 1.0 V ICBO VCB = 15 V hFE VCE = 8.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 16 25 2.0 500 20 200 UNITS V V µA µA --- COB VCB = 10 V f = 1.0 MHz 1.5 pF ηC \|S21C\|2 POSC VCC = 12 V VCE = 8.0 V VCC = 12 V POUT = 0.3 W IC = 100 mA IC = 120 mA f = 7.5 GHz f = 1.0 GHz f = 7.5 GHz 4.0 22 320 % dB mW A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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