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PDF ASI10607 Data sheet ( Hoja de datos )
| Número de pieza | ASI10607 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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HF75-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF75-28S is Designed for
FEATURES:
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCB 60 V
VCE
PDISS
TJ
T STG
θ JC
35 V
140 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.05 OC/W
PACKAGE STYLE .380 STUD
.112x45°
A
BC
EE
ØC
B
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .980 / 24.89
C .370 / 9.40
D .004 / 0.10
E .320 / 8.13
F .100 / 2.54
G .450 / 11.43
H .090 / 2.29
I .155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10607
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
RBE = 10 Ω
BVEBO
IE = 10 mA
ICES VE = 28 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5
10 100
UNITS
V
V
V
mA
---
Cob VCB = 28 V
f = 1.0 MHz
80 pF
GPE VCE = 25 V
ICQ = 3.2 A
f = 225 MHz
13.5
14.5
dB
IMD3
PREF = 16 W
Vision = -8 dB
Snd. = -7 dB
Side Band = -16 dB
-55 dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet ASI10607.PDF ] | |
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