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PDF ASI10599 Data sheet ( Hoja de datos )
| Número de pieza | ASI10599 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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HF100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-12 is Designed for
FEATURES:
• PG = 12 dB min. at 100 W/30 MHz
• IMD3 = -30 dBc max. at 100 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO
36 V
VCEO
18 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
290 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.6 OC/W
PACKAGE STYLE .500 4L FLG
A
FULL R
C
B
.112x45° L
Ø.125 NOM.
E
H
D
G
F
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
.255 / 6.48
D .720 / 18.28
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
.505 / 12.83
H .003 / 0.08
.007 / 0.18
I .090 / 2.29
.110 / 2.79
J .150 / 3.81
.175 / 4.45
K .280 / 7.11
L .980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10599
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCES
IC = 100 mA
BVCEO
IC = 100 mA
BVEBO
IE = 10 mA
ICES VCE = 15 V
hFE VCE = 5.0 V
IC = 5.0 A
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
20
10 200
UNITS
V
V
V
V
mA
---
COB VCB = 12.5 V
f = 1.0 MHz
400
pF
GP
IMD3
VCE = 12.5 V
VCE = 12.5 V
ICQ = 150 mA
ICQ = 150 mA
f = 30 MHz
POUT = 100 W
11
13 dB
-30 dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet ASI10599.PDF ] | |
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