DataSheet.es    


PDF ALD1103 Data sheet ( Hoja de datos )

Número de pieza ALD1103
Descripción DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
Fabricantes Advanced Linear Devices 
Logotipo Advanced Linear Devices Logotipo



Hay una vista previa y un enlace de descarga de ALD1103 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! ALD1103 Hoja de datos, Descripción, Manual

ADVANCED
LINEAR
DEVICES, INC.
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1103
GENERAL DESCRIPTION
The ALD1103 is a monolithic dual N-channel and dual P-channel matched
transistor pair intended for a broad range of analog applications. These
enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of an
ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET
pair in one package.
The ALD1103 offers high input impedance and negative current temperature
coefficient. The transistor pair is matched for minimum offset voltage and
differential thermal response, and it is designed for precision signal
switching and amplifying applications in +2V to +12V systems where low
input bias current, low input capacitance and fast switching speed are
desired. Since these are MOSFET devices, they feature very large (almost
infinite) current gain in a low frequency, or near DC, operating environment.
When used in pairs, a dual CMOS analog switch can be constructed. In
addition, the ALD1103 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1103 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
FEATURES
• Thermal tracking between N-channel and P-channel pairs
• Low threshold voltage of 0.7V for both N-channel &
P-channel MOSFETS
• Low input capacitance
• Low Vos -- 10mV
• High input impedance -- 1013typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Matched N-channel and matched P-channel in one package
APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Analog switches
• Choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog inverter
• Precision matched current sources
PIN CONFIGURATION
DN1 1
GN1 2
14 DN2
13 GN2
SN1 3
V- 4
12 SN2
11 V+
DP1 5
10 DP2
GP1 6
9 GP2
SP1 7
8 SP2
DB, PB, SB PACKAGE
BLOCK DIAGRAM
N GATE 1 (2)
N DRAIN 1 (1)
N DRAIN 2 (14)
N SOURCE 1 (3)
SUBSTRATE (4)
N SOURCE 2 (12)
N GATE 2 (13)
ORDERING INFORMATION
Operating Temperature Range*
-55°C to +125°C
0°C to +70°C
0°C to +70°C
14-Pin
CERDIP
Package
14-Pin
Plastic Dip
Package
14-Pin
SOIC
Package
ALD1103 DB
ALD1103 PB
ALD1103 SB
* Contact factory for industrial temperature range.
P GATE 1 (6)
P DRAIN 1 (5)
P DRAIN 2 (10)
P SOURCE 1 (7)
SUBSTRATE (11)
P SOURCE 2 (8)
P GATE 2 (9)
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com

1 page




ALD1103 pdf
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
V+ = +5V
V+ = +5V
Q3
Q4
ISET
RSET
I SOURCE
Q1
ALD1103
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
Q2
I SOURCE = ISET
= V+ -Vt
RSET
=~ 4
RSET
CURRENT SOURCE WITH GATE CONTROL
1/2 ALD1103
V+ = +5V
Q3 Q4
ISET
Digital Logic Control
of Current Source
ON
OFF
RSET
ISOURCE
Q1
1/4 ALD1103
Q1 : N - Channel MOSFET
Q3,Q4 : P - Channel MOSFET
DIFFERENTIAL AMPLIFIER
V+
PMOS PAIR
Q3 Q4
VIN+
Q1 Q2
NMOS PAIR
VOUT
VIN-
ALD1103
Current
Source
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
CURRENT SOURCE MULTIPLICATION
V+ = +5V
ISET
RSET
QSET
Q1 Q2
Q3
ISOURCE = ISET x N
QN
QSET, Q1..QN: ALD 1101 or ALD 1103
N - Channel MOSFET
ALD1103
Advanced Linear Devices
5

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet ALD1103.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
ALD1101DUAL N-CHANNEL MATCHED MOSFET PAIRAdvanced Linear Devices
Advanced Linear Devices
ALD1101ADUAL N-CHANNEL MATCHED MOSFET PAIRAdvanced Linear Devices
Advanced Linear Devices
ALD1101BDUAL N-CHANNEL MATCHED MOSFET PAIRAdvanced Linear Devices
Advanced Linear Devices
ALD1102DUAL P-CHANNEL MATCHED MOSFET PAIRAdvanced Linear Devices
Advanced Linear Devices

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar