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PDF BC817W Data sheet ( Hoja de datos )
| Número de pieza | BC817W | |
| Descripción | 500mA NPN general-purpose transistors | |
| Fabricantes | NXP Semiconductors | |
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BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1. Product overview
Type number
Package
NXP
BC817
SOT23
BC817W
SOT323
BC337[1]
SOT54 (TO-92)
JEITA
-
SC-70
SC-43A
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
BC807
BC807W
BC327
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
VCEO
IC
ICM
hFE
Quick reference data
Parameter
Conditions
collector-emitter voltage
collector current (DC)
open base;
IC = 10 mA
peak collector current
DC current gain
BC817; BC817W; BC337
IC = 100 mA;
VCE = 1 V
BC817-16; BC817-16W; BC337-16
BC817-25; BC817-25W; BC337-25
BC817-40; BC817-40W; BC337-40
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 45 V
-
-
[1] -
100
100
160
250
-
-
-
-
-
-
-
500 mA
1A
-
600
250
400
600
1 page  
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
ICBO collector-base cut-off current
IEBO
hFE
hFE
VCEsat
VBE
Cc
fT
emitter-base cut-off current
DC current gain
BC817; BC817W; BC337
BC817-16; BC817-16W;
BC337-16
BC817-25; BC817-25W;
BC337-25
BC817-40; BC817-40W;
BC337-40
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
Conditions
IE = 0 A; VCB = 20 V
IE = 0 A; VCB = 20 V;
Tj = 150 °C
IC = 0 A; VEB = 5 V
IC = 100 mA; VCE = 1 V
IC = 500 mA; VCE = 1 V
IC = 500 mA; IB = 50 mA
IC = 500 mA; VCE = 1 V
IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
IC = 10 mA; VCE = 5 V;
f = 100 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
Min Typ Max Unit
- - 100 nA
- - 5 μA
-
[1]
100
100
-
-
-
100 nA
600
250
160 -
400
250 -
600
[1] 40
[1] -
-
-
-
700 mV
[2] - - 1.2 V
- 3 - pF
100 - - MHz
BC817_BC817W_BC337_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
5 of 19
5 Page 
NXP Semiconductors
8. Package outline
Plastic surface-mounted package; 3 leads
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
Fig 13. Package outline SOT23 (TO-236AB)
BC817_BC817W_BC337_6
Product data sheet
Rev. 06 — 17 November 2009
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP B.V. 2009. All rights reserved.
11 of 19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet BC817W.PDF ] | |
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