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Datasheet BCX69 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BCX69GENERAL PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current —Base Current Maximum —Collector Current Continuous —Collector Current Maximum Symbol VCEO VCES VEBO
Motorola Semiconductors
Motorola Semiconductors
transistor
2BCX69PNP Silicon AF Transistors

SMD Type PNP Silicon AF Transistors BCX69 Transistors Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0
Kexin
Kexin
transistor
3BCX69PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – FEBRUARY 1995 7 FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE – PARTMARKING DETAIL – BCX68 BCX69 – CJ BCX69-16 – CG BCX69-25 – CH BCX69 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Vol
Zetex Semiconductors
Zetex Semiconductors
transistor
4BCX69PNP Silicon AF Transistors (For general AF applications High collector current)

PNP Silicon AF Transistors q q q q q BCX 69 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 (NPN) Type BCX 69 BCX 69-10 BCX 69-16 BCX 69-25 Marking – CF CG CH Ordering Code (tape and reel) Q62702-C1714 Q6
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
5BCX69PNP Silicon AF Transistors

BCX69 PNP Silicon AF Transistors  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage  Complementary type: BCX68 (NPN) 1 2 3 2 VPS05162 Type BCX69 BCX69-10 BCX69-16 BCX69-25 Maximum Ratings Parameter Marking CE CF CG CH 1=B 1=B 1=
Infineon Technologies AG
Infineon Technologies AG
transistor
6BCX69-10PNP Silicon AF Transistors (For general AF applications High collector current)

PNP Silicon AF Transistors q q q q q BCX 69 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 (NPN) Type BCX 69 BCX 69-10 BCX 69-16 BCX 69-25 Marking – CF CG CH Ordering Code (tape and reel) Q62702-C1714 Q6
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
7BCX69-10PNP Silicon AF Transistors

BCX69 PNP Silicon AF Transistors  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage  Complementary type: BCX68 (NPN) 1 2 3 2 VPS05162 Type BCX69 BCX69-10 BCX69-16 BCX69-25 Maximum Ratings Parameter Marking CE CF CG CH 1=B 1=B 1=
Infineon Technologies AG
Infineon Technologies AG
transistor
8BCX69-16PNP Silicon AF Transistors (For general AF applications High collector current)

PNP Silicon AF Transistors q q q q q BCX 69 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 (NPN) Type BCX 69 BCX 69-10 BCX 69-16 BCX 69-25 Marking – CF CG CH Ordering Code (tape and reel) Q62702-C1714 Q6
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
9BCX69-16PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – FEBRUARY 1995 7 FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE – PARTMARKING DETAIL – BCX68 BCX69 – CJ BCX69-16 – CG BCX69-25 – CH BCX69 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Vol
Zetex Semiconductors
Zetex Semiconductors
transistor


BCX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BCX12NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage)

NPN Silicon AF Switching Transistor For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary type: BCX 13 (PNP) q 2 BCX 12 3 1 Type BCX 12 Marking BCX 12 Ordering Code Q62702-C25 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Rati
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
2BCX13PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)

PNP Silicon AF Switching Transistor For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary type: BCX 12 (NPN) q 2 1 3 BCX 13 Type BCX 13 Marking BCX 13 Ordering Code Q62702-C26 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratin
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
3BCX13Trans GP BJT PNP 125V 0.8A

New Jersey Semiconductor
New Jersey Semiconductor
data
4BCX17GENERAL PURPOSE TRANSISTOR

BCX17,18 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO vEBO Value BCX17 BCX18 45 25 50 30 5.0 500 Unit Vdc Vdc THER
Motorola Semiconductors
Motorola Semiconductors
transistor
5BCX17SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX17 BCX18 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCX17 = T1 BCX18 = T2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RA
CDIL
CDIL
transistor
6BCX17SMALL SIGNAL PNP TRANSISTOR

BCX17 SMALL SIGNAL PNP TRANSISTOR Type BCX17 Marking T1 s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING s NPN COMPLEMENTS IS BCX19 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLU
STMicroelectronics
STMicroelectronics
transistor
7BCX17PNP General Purpose Transistors

SMD Type TransistIoCrs PNP General Purpose Transistors BCX17,BCX18 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings
Kexin
Kexin
transistor
8BCX17PNP General Purpose Transistor

Production specification PNP General Purpose Transistor FEATURES z High current (max.500mA). z Low voltage(max.45V). Pb Lead-free BCX17/BCX18 APPLICATIONS z Saturated switching and driver applications e.g.for Industrial service. z Thick and thin-film circuits ORDERING INFORMATION Type No. Ma
Galaxy Microelectronics
Galaxy Microelectronics
transistor
9BCX17PNP small signal transistor

BCX17 PNP small signal transistor Parameter VCES IC Value -50V -500mA lFeatures 1)High gain and low saturation voltage. 2)Ideal for small load switching applications. 3)Complements the BCX19. lOutline   SOT-23           SST3                  lInner circu
ROHM Semiconductor
ROHM Semiconductor
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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