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PDF BF998W Data sheet ( Hoja de datos )
| Número de pieza | BF998W | |
| Descripción | Silicon N-Channel MOSFET Tetrode | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BF998W (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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BF998...
Silicon N_Channel MOSFET Tetrode
• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF998
BF998R
BF998W
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
Pin Configuration
2=D 3=G2 4=G1 -
2=S 3=G1 4=G2 -
2=S 3=G1 4=G2 -
-
-
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
TS ≤ 76 °C, BF998, BF998R
TS ≤ 94 °C, BF998W
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point1)
BF998, BF998R
BF998W
Symbol
VDS
ID
±IG1/2SM
Ptot
Tstg
Tch
Symbol
Rthchs
Value
12
30
10
200
200
-55 ... 150
150
Value
≤ 370
≤ 280
1For calculation of RthJA please refer to Application Note Thermal Resistance
Marking
MOs
MRs
MR
Unit
V
mA
°C
Unit
K/W
1 Feb-13-2004
1 page  
BF998...
Gate 1 forward transconductance
gfs1 = ƒ (VG1S)
26
mS
22
4V
20
2V
18
16
14
12
10
8 1V
6
4
2 0V
0-1 -0.75 -0.5 -0.25 0
0.25 V
0.75
VG1S
Drain current ID = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
30
mA
4V
2V
20 1V
15
10
0V
5
0-1 -0.75 -0.5 -0.25 0 0.25 0.5 V
1
VG1S
Power gain Gps = ƒ (VG2S)
f = 45 MHz
Noise figure F = ƒ (VG2S)
f = 45 MHz
30 10
dB
dB
8
7
20
6
15 5
4
10
3
2
5
1
00 1 2 V 4
VG2S
00 1 2 V 4
VG2S
5 Feb-13-2004
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BF998W.PDF ] | |
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