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Datasheet BF823 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BF823 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BF821/BF823 TRANSISTOR (PNP)
SOT-23
FEATURES z Low current (max.-50 mA) z High voltage (max.-300V) z Telephony and professional communication equipment.
1. BASE 2. EMITTER 3. COLLECTOR
MARKING: BF821:1W, B |  JCET | transistor |
| 2 | BF823 | PNP High-Voltage Transistors PNP High-Voltage Transistors
FEATURES
z Low current(max.-50mA). z High voltage(max.-300V). z Complements:BF820,BF822.
Pb
Lead-free
APPLICATIONS
z Telephony and professional communication equipment.
Production specification
BF821/BF823
ORDERING INFORMATION
Type No.
Marking
BF821 BF823
1W 1Y
|  Galaxy Microelectronics | transistor |
| 3 | BF823 | SILICON EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BF821 BF823
SILICON EPITAXIAL TRANSISTORS
P–N–P transistors
Marking BF821 = 1W BF823 = 1Y
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER |  CDIL | transistor |
| 4 | BF823 | PNP High-Voltage Transistors SMD Type
Transistors
PNP High-Voltage Transistors BF821,BF823
Features
Low current (max. 50 mA) High voltage (max. 300 V).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Maximum Ratings Ta = |  Kexin | transistor |
| 5 | BF823 | PNP high-voltage transistors |  NXP Semiconductors | transistor |
| 6 | BF823 | Small Signal Transistors (PNP) BF821, BF823
Small Signal Transistors (PNP)
SOT-23
.122 (3.1) .118 (3.0) .016 (0.4) 3
FEATURES ♦ PNP Silicon Epitaxial Planar Transistors
Top View
.056 (1.43) .052 (1.33)
especially suited for application in classB video output stages of TV receivers and monitors.
♦ As complementary types, th |  General Semiconductor | transistor |
| 7 | BF823 | Surface mount Si-Epitaxial PlanarTransistors BF 821, BF 823 PNP
High Voltage Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2.9 ±0.1 0.4
3
250 mW SOT-23 (TO-236) 0.01 g
1.1
Plastic case Kunststoffgehäuse
1.3 ±0.1
Type Code
|  Diotec Semiconductor | transistor |
BF8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BF800 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | BF801 | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | BF802 | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | BF803 | Diode, Rectifier American Microsemiconductor diode | | |
| 5 | BF804 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | BF805 | Diode, Rectifier American Microsemiconductor diode | | |
| 7 | BF806 | Diode, Rectifier American Microsemiconductor diode | | |
| 8 | BF819 | NPN high-voltage transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF819 NPN high-voltage transistor
Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1997 Sep 03
Philips Semiconductors
Product specification
NPN high-voltage transistor
FEATURES • Low current (max. 100 mA NXP Semiconductors transistor | | |
| 9 | BF820 | Silicon NPN transistor BF820
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
电流小，电压高。 Low current, high voltage.
用途 / Applications
用于电话机等专业的通迅设备。 Te  BLUE ROCKET ELECTRONICS transistor | |
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