|
|
Número de pieza | BFS482 | |
Descripción | NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFS482 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! NPN Silicon RF Transistor
• For low-noise, high-gain broadband amplifiers
at collector currents from 1mA to 20mA.
• fT = 8GHz
F = 1.2dB at 900MHz
• Two (galvanic) internal isolated
Transistors in one package
BFS 482
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFS 482 RGs
Q62702-F1573
1/4 = B 2/5 = E 3/6 = C
Package
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 81 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
35
4
250
150
- 65 ... + 150
- 65 ... + 150
≤ 275
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-16-1996
1 page BFS 482
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
0.50
pF
Ccb 0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 4 8 12 16
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
VCE = Parameter
22
V 24
VR
dB
G
18
16
14
12
10V
5V
3V
2V
10 1V
8
0.7V
6
0 5 10 15 20 25 30 35 mA 45
IC
Transition frequency fT = f (IC)
VCE = Parameter
8.0
GHz
fT
6.0
5.0
8V
5V
4.0 3V
2V
3.0
1V
2.0 0.7V
1.0
0.0
0
5 10 15 20 25 30 35 mA 45
IC
Power Gain Gma, Gms = f(IC)
f = 1.8GHz
VCE = Parameter
14
dB
G
10
8V
5V
3V
8 2V
6
4 1V
0.7V
2
0
0 5 10 15 20 25 30 35 mA 45
IC
Semiconductor Group
5
Dec-16-1996
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BFS482.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFS480 | NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) | Siemens Semiconductor Group |
BFS480 | NPN Silicon RF Transistor | Infineon Technologies AG |
BFS481 | NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA) | Siemens Semiconductor Group |
BFS481 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |