Datasheet BFR35 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BFR35	NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS	Siemens Semiconductor Group	transistor
2	BFR35	NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)	Siemens Semiconductor Group	transistor
3	BFR35A	NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS	Siemens Semiconductor Group	transistor
4	BFR35AP	NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 35AP GEs Q62702-F938 1=B 2=	Siemens Semiconductor Group	transistor
5	BFR35AP	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR35AP ESD (Electrostatic discharge) sensitive dev	Infineon Technologies AG	transistor

BFR Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BFR106	NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors NPN 5 GHz wideband transistor Product specification BFR106 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended f	NXP Semiconductors	transistor
2	BFR106	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers) BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin	Siemens Semiconductor Group	transistor
3	BFR106	Low Noise Silicon Bipolar RF Transistor Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply volta	Infineon Technologies AG	transistor
4	BFR106	Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB	New Jersey Semiconductor	data
5	BFR14B	NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz	Siemens Semiconductor Group	transistor
6	BFR14C	NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz	Siemens Semiconductor Group	transistor
7	BFR180	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration	Siemens Semiconductor Group	transistor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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