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PDF BS209 Data sheet ( Hoja de datos )
| Número de pieza | BS209 | |
| Descripción | DMOS Transistors (P-Channel) | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
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BS209
DMOS Transistors (P-Channel)
TO-92
.181 (4.6)
.142 (3.6)
max.∅ .022 (0.55)
.098 (2.5)
DS
G
Dimensions in inches and (millimeters)
FEATURES
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
–VDSS
–VDGS
VGS
400
400
±20
Drain Current (continuous) at Tamb = 25 °C
–ID 120
Power Dissipation at Tamb = 25 °C
Ptot 8301)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Inverse Diode
Max. Forward Current (continuous)
at Tamb = 25 °C
Forward Voltage Drop (typ.)
at VGS = 0 V, IF = 400 mA, Tj = 25 °C
Symbol
IF
VF
Value
400
1.0
Unit
V
V
V
mA
mW
°C
°C
Unit
mA
V
4/98
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BS209.PDF ] | |
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