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PDF BSS87 Data sheet ( Hoja de datos )
| Número de pieza | BSS87 | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS87 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Rev. 2.0
SIPMOSÒ Small-Signal-Transistor
Feature
· N-Channel
· Enhancement mode, Logic Level
· dv/dt rated
· Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogenfree according to IE C 61249221
BSS87
Product Summary
VDS
RDS(on)
ID
240
6
0.26
V
W
A
1
2
3
2
VPS05558
Type
BSS87
Package
P-SOT89-4-2
Pb-free
Yes
Tape and Reel Information Marking
H6327: 1000 pcs/reel
KA
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Continuous drain current
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID
ID puls
dv/dt
0.26
0.21
1.04
6
IS=0.26A, VDS=192V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD class (JESD22-A114-HBM)
VGS
±20
1A (>250V, <500V)
Power dissipation, related to min. footprint
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
1
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2016-05-30
1 page  
Rev. 2.0
BSS87
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
0.52
A 10V
7V
0.44 6V
5V
0.4 4.5V
0.36 4.1V
3.5V
0.32 2.9V
2.3V
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
0 0.5 1 1.5 2 2.5 3 V
4
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
10
W 2.3V
8
7
2.9V 3.5V
4.1V
4.5V
5V
6V
7V
10V
6
5
4
3
2
1
0
0 0.08 0.16 0.24 0.32 0.4 A 0.52
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
1
A
0.8
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.6
S
0.7
0.4
0.6
0.5 0.3
0.4
0.2
0.3
0.2
0.1
0.1
0
0 0.8 1.6 2.4 3.2 V 4.4
VGS
Page 5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A
ID
1
2016-05-30
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSS87.PDF ] | |
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