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PDF BSS79C Data sheet ( Hoja de datos )
| Número de pieza | BSS79C | |
| Descripción | NPN Silicon Switching Transistors | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS79C (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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NPN Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 (PNP)
BSS79, BSS81
3
2
1 VPS05161
Type
BSS79B
BSS79C
BSS81B
BSS81C
Marking
CEs
CFs
CDs
CGs
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 77 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
BSS79 BSS81
40 35
75
6
800
1
100
200
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
220
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
V
mA
A
mA
mW
°C
K/W
1 Nov-30-2001
1 page  
BSS79, BSS81
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
2
mA
Ι C 10 2
5
V CE
EHP00756
V BE
10 1
5
DC current gain hFE = f (IC)
VCE = 10V
10 3 BSS 79/81
5
h FE
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00676
10 0
0
0.2 0.4 0.6 0.8 1.0 V 1.2
VBE sat , VCE sat
Delay time td = f (IC)
Rise time tr = f (IC)
10 1
10 -1 10 0 10 1
Storage time tstg = f (IC)
Fall time
tf = f (IC)
10 2 mA 10 3
ΙC
10 3 BSS 79/81
ns
5
td, tr
tr
10 2
EHP00677
VCC = 30 V
h FE = 10
tr VBE = 5 V
10 3 BSS 79/81
ns
5
t stg, t f
10 2
EHP00678
t stg
hFE = 10
5
VBE = 2 V
td
10 1
10 0
td
VBE = 0 V
5 10 1
5
t f hFE = 20
hFE = 10
5 10 2 mA 5 10 3
ΙC
5
10 1
10 1
5 10 2
mA 5
ΙC
10 3
Nov-30-2001
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BSS79C.PDF ] | |
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