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PDF BSS139 Data sheet ( Hoja de datos )
| Número de pieza | BSS139 | |
| Descripción | SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS139 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SIPMOS® Small-Signal Transistor
q VDS 250 V
q ID
0.04 A
q RDS(on) 100 Ω
q N channel
q Depletion mode
q High dynamic resistance
q Available grouped in VGS(th)
BSS 139
Type
Ordering
Code
Tape and Reel
Information
BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
BSS 139 Q67000-S221 E7941: 3000 pcs/reel;
VGS(th) selected in groups:
(see page 491)
Pin Configuration Marking
123
G S D STs
Package
SOT-23
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current, TA = 25 ˚C
Pulsed drain current,
TA = 25 ˚C
Max. power dissipation, TA = 25 ˚C
Operating and storage temperature range
Symbol
VDS
VDGR
VGS
Vgs
ID
ID puls
Ptot
Tj, Tstg
Values
250
250
± 14
± 20
0.04
0.12
0.36
– 55 … + 150
Unit
V
A
W
˚C
Thermal resistance, chip-ambient
(without heat sink)
chip-substrate – reverse side 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
RthJA
RthJSR
–
–
1) For package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
≤ 350
≤ 285
E
55/150/56
K/W
–
Semiconductor Group
1
10.94
1 page  
BSS 139
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max.
Typ. forward transconductance gfs = f (ID)
parameter: VDS ≥ 2 × ID × R ,DS(on)max. tp = 80 µs
Drain-source on-resistance
RDS(on) = f (Tj)
parameter: ID = 0.014 A, VGS = 0 V, (spread)
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Semiconductor Group
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BSS139.PDF ] | |
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