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PDF BSS138W Data sheet ( Hoja de datos )
| Número de pieza | BSS138W | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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 1. - 50V, 210mA, N-Channel MOSFET  Hay una vista previa y un enlace de descarga de BSS138W (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
A
D
BC
Mechanical Data
GS
· Case: SOT-323, Molded Plastic
· Case Material - UL Flammability Rating 94V-0
G
H
· Moisture sensitivity: Level 1 per J-STD-020A K
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
J
DE
Drain
· Marking Code (See Page 2): K38
· Ordering & Date Code Information: See Page 2
· Weight: 0.006 grams (approx.)
Gate
L
M
Maximum Ratings @ TA = 25°C unless otherwise specified
Source
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
Pd
RqJA
Tj, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise specified
BSS138W
50
50
±20
200
200
625
-55 to +150
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
a 0° 8°
All Dimensions in mm
Units
V
V
V
mA
mW
°C/W
°C
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
IDSS
IGSS
50
¾
¾
75 ¾
V VGS = 0V, ID = 250mA
¾ 0.5 µA VDS = 50V, VGS = 0V
¾ ±100 nA VGS = ±20V, VDS = 0V
VGS(th) 0.5 1.2 1.5
V VDS = VGS, ID = -250mA
RDS (ON) ¾
1.4 3.5
W VGS = 10V, ID = 0.22A
gFS 100 ¾
¾ mS VDS =25V, ID = 0.2A, f = 1.0KHz
Ciss ¾ ¾ 50 pF
Coss
¾
¾
25
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Crss ¾ ¾ 8.0 pF
tD(ON)
¾
¾
20
ns VDD = 30V, ID = 0.2A,
tD(OFF)
¾
¾
20
ns RGEN = 50W
Note: 1. RGS £ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
DS30206 Rev. 3 - 2
1 of 5
www.diodes.com
BSS138W
1 page  
1
0.1
0.01
150° C
25° C
-55° C
0.001
0
0.2 0.4 0.6 0.8
1 1.2
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
100
VGS = 0V
f = 1MHz
CiSS
10
COSS
CrSS
1
0
5
10 15 20
25 30
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain Source Voltage
DS30206 Rev. 3 - 2
5 of 5
www.diodes.com
BSS138W
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BSS138W.PDF ] | |
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