|
|
PDF BSP75N Data sheet ( Hoja de datos )
| Número de pieza | BSP75N | |
| Descripción | Smart Lowside Power Switch | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSP75N (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
Smart Lowside Power Switch
HITFETâ BSP 75N
Data Sheet V1.0
Features
• Logic Level Input
• Input protection (ESD)
• Thermal shutdown with auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
Application
• All kinds of resistive, inductive and capacitive loads in switching applications
• µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt
Powernet
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power Technology. Fully protected by embedded
protection functions.
Type
HITFETâ BSP 75N
Ordering Code
Q67060-S7215
Package
P-SOT223-4
Product Summary
Parameter
Continuous drain source voltage
On-state resistance
Current limitation
Nominal load current
Clamping energy
Symbol
VDS
RDS(ON)
ID(lim)
ID(Nom)
EAS
Value
60
550
1
0.7
550
Unit
V
mΩ
A
A
mJ
Data Sheet V1.0
1
2003-01-10
1 page  
HITFETâ BSP 75N
Electrical Characteristics
Tj = 25 °C, unless otherwise specified
Parameter
Sym-
bol
Limit Values Unit Test Conditions
min. typ. max.
Static Characteristics
Drain source clamp voltage
Off state drain current
VDS(AZ) 60 –
IDSS –
–
75 V
5 µA
Input threshold voltage
VIN(th) 1
1.8 2.5 V
Input current:
µA
normal operation, ID < ID(lim):
IIN(1)
current limitation mode, ID = ID(lim): IIN(2)
After thermal shutdown, ID = 0 A: IIN(3)
– 100 200
– 250 400
1000 1500 2000
On-state resistance
RDS(on)
Tj = 25 °C
–
Tj = 150 °C
–
mΩ
490 675
850 1350
On-state resistance
RDS(on)
Tj = 25 °C
–
Tj = 150 °C
–
mΩ
430 550
750 1000
Nominal load current
ID(Nom) 0.7 – – A
Current limit
ID(lim) 1
1.5 1.9 A
ID = 10 mA,
Tj = -40 … +150 °C
VIN = 0 V,
VDS = 32 V,
Tj = -40 … +150 °C
ID = 10 mA
VIN = 5 V
ID = 0.7 A,
VIN = 5 V
ID = 0.7 A,
VIN = 10 V
VBB = 12 V,
VDS = 0.5 V,
TS = 85 °C,
Tj < 150 °C
VIN = 10 V,
VDS = 12 V
Dynamic Characteristics 1)
Turn-on time
Turn-off time
VIN to 90% ID: ton – 10 20 µs RL = 22 Ω,
VIN = 0 to 10 V,
VBB = 12 V
VIN to 10% ID: toff – 10 20 µs RL = 22 Ω,
VIN = 10 to 0 V,
VBB = 12 V
Data Sheet V1.0
5
2003-01-10
5 Page 
HITFETâ BSP 75N
1 Max. allowable power dissipation
Ptot = f(TAmb)
2
P tot
1W,6
m ax.
1 ,2
0 ,8
0 ,4
0
0 2 5 5 0 7 5 1 0 0 1°C2 5 1 5 0
T Amb
3 On-state resistance RON = f(Tj);
ID = 0.7 A; VIN = 5 V
1400
R ON
1m2 0Ω0
1000
800
600
max.
typ.
2 On-state resistance RON = f(Tj);
ID = 0.7 A; VIN = 10 V
1000
R ON
9m0Ω0
800
700 max.
600
500 typ.
400
300
200
100
0
-50 -25 0 2 5 5 0 75 1 0 0 1°2C5 15 0
Tj
4 Typ. input threshold voltage
VIN(th) = f(Tj); ID = 10 mA; VDS = 12 V
2,5
V IN(th)
V2 typ .
1,5
1
400
0,5
200
0
-50 -25 0
2 5 5 0 7 5 1 0 0 1°2C5 1 5 0
Tj
0
-50 -25 0
25 5 0 7 5 1 00 1°2C5 15 0
Tj
Data Sheet V1.0
11
2003-01-10
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BSP75N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSP75 | Smart Lowside Power Switch (Logic Level Input Input protection ESD Thermal shutdown with restart) |  Siemens Semiconductor Group |
| BSP752R | Smart Power High-Side-Switch | Infineon Technologies AG |
| BSP752T | Smart Power High-Side-Switch | Infineon Technologies AG |
| BSP75A | Smart Lowside Power Switch (Logic Level Input Input protection ESD Thermal shutdown with restart) | Siemens Semiconductor Group |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |