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PDF BSP324 Data sheet ( Hoja de datos )
| Número de pieza | BSP324 | |
| Descripción | SIPMOS Power-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP324 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SIPMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Rev. 1.0
BSP324
Product Summary
VDS
RDS(on)
ID
400
25
0.17
V
Ω
A
SOT-223
Type
BSP324
Package
SOT-223
Ordering Code Tape and Reel Information Marking
Q67000-S215 E6327: 1000 pcs/reel
BSP324
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
VGS
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
0.17
0.14
0.68
6
±20
Class 1
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2003-02-21
1 page  
Rev. 1.0
BSP324
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
0.6
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
22
Ω
0.4
0.3 10V
7V
6V
0.2 5V
4.5V
4.3V
4.1V
0.1 3.9V
3.7V
0
012 34 56 78
10
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.35
A
0.25
0.2
18
16
14
12
3.7V
10 3.9V
4.1V
8 4.3V
4.5V
6 5V
6V
4 7V
10V
2
0
0 0.05 0.1 0.15 0.2 0.25 A 0.35
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.36
S
0.28
0.24
0.2
0.15
0.1
0.05
0.16
0.12
0.08
0.04
0
0 1 2 3V 5
VGS
0
0 0.05 0.1 0.15 0.2 0.25 A 0.35
ID
Page 5
2003-02-21
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSP324.PDF ] | |
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