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PDF BSH108 Data sheet ( Hoja de datos )
| Número de pieza | BSH108 | |
| Descripción | N-channel enhancement mode field-effect transistor | |
| Fabricantes | NXP Semiconductors | |
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BSH108
N-channel enhancement mode field-effect transistor
Rev. 02 — 25 October 2000
M3D088
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSH108 in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Battery management
s High speed switch
c
c s Low power DC to DC converter.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 source (s)
3
3 drain (d)
12
Top view
MSB003
SOT23
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
1 page  
Philips Semiconductors
BSH108
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
VDS = 24 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
VGS = 10 V; ID = 1 A; Figure 7 and 8
Tj = 25 °C
VGS = 5 V; ID = 1 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
Dynamic characteristics
gfs forward transconductance
VDS = 10 V; ID = 1 A; Figure 11
Qg(tot) total gate charge
VDD = 15 V; VGS = 10 V; ID = 5 A; Figure 14
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12
Coss output capacitance
Crss
td(on)
reverse transfer capacitance
turn-on delay time
VDD = 10 V; RL = 10 Ω; VGS = 10 V; RG = 6 Ω
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain (diode forward) voltage IS = 0.83 A; VGS = 0 V; Figure 13
trr reverse recovery time
Qr recovered charge
IS = 1 A; dIS/dt = −100 A/µs; VGS = 0 V;
VDS = 25 V
Min Typ Max Unit
30 40 −
27 − −
V
V
1 1.5 2 V
0.5 − − V
− − 3.2 V
− 0.01 1.0 µA
− − 10 µA
− 10 100 nA
− 77 120 mΩ
− 102 140 mΩ
− 170 240 mΩ
2 4.5 − S
− 6.4 10 nC
− 0.5 − nC
− 1.3 − nC
− 190 − pF
− 70 − pF
− 50 − pF
− 3 − ns
− 8 − ns
− 15 − ns
− 26 − ns
− 0.8 1.2 V
− 25 − ns
− 20 − nC
9397 750 07652
Product specification
Rev. 02 — 25 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
11. Data sheet status
BSH108
N-channel enhancement mode field-effect transistor
Datasheet status
Objective specification
Product status
Development
Preliminary specification Qualification
Product specification
Production
Definition [1]
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
9397 750 07652
Product specification
Rev. 02 — 25 October 2000
© Philips Electronics N.V. 2000 All rights reserved.
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