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Número de pieza | BSH105 | |
Descripción | N-channel enhancement mode MOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSH105 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH105
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDS = 20 V
ID = 1.05 A
RDS(ON) ≤ 250 mΩ (VGS = 2.5 V)
VGS(TO) ≥ 0.4 V
GENERAL DESCRIPTION
N-channel, enhancement mode,
logic level, field-effect power
transistor. This device has very low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH105 is supplied in the
SOT23 subminiature surface
mounting package.
PINNING
PIN
DESCRIPTION
1 gate
2 source
3 drain
SOT23
3
Top view
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
RGS = 20 kΩ
Ta = 25 ˚C
Ta = 100 ˚C
Ta = 25 ˚C
Ta = 25 ˚C
Ta = 100 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
20
20
±8
1.05
0.67
4.2
0.417
0.17
150
UNIT
V
V
V
A
A
A
W
W
˚C
TYP.
300
MAX.
-
UNIT
K/W
August 1998
1
Rev 1.000
1 page Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH105
Gate-source voltage, VGS (V)
10
9
VDD = 20 V
RD = 20 Ohms
8 Tj = 25 C
7
6
5
4
3
2
1
0
024
Gate charge, QG (nC)
6
BSH105
8
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Source-Drain Diode Current, IF (A)
-5
BSH105
-4.5
-4
-3.5
-3
-2.5
150 C
-2 Tj = 25 C
-1.5
-1
-0.5
0
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2
Drain-Source Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
August 1998
5
Rev 1.000
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BSH105.PDF ] |
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