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PDF BUP309 Data sheet ( Hoja de datos )

Número de pieza BUP309
Descripción IGBT (High switching speed Low tail current Latch-up free Avalanche rated)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! BUP309 Hoja de datos, Descripción, Manual

BUP 309
IGBT
Preliminary data
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
• Low forward voltage drop
Remark: The TO-218 AB case doesn't solve the
standards VDE 0110 and UL 508 for creeping distance
Type
BUP 309
VCE IC
1700V 25A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 k
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25
L = 200 µH, Tj = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
EAS
Ptot
Tj
Tstg
Semiconductor Group
1
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67078-A4204-A2
Values
1700
Unit
V
1700
± 20
25
16
A
50
32
mJ
23
310
-55 ... + 150
-55 ... + 150
W
°C
Jul-30-1996

1 page




BUP309 pdf
Package Outlines
Dimensions in mm
Weight: 8 g
BUP 309
Semiconductor Group
5
Jul-30-1996

5 Page










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