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Número de pieza | BUP309 | |
Descripción | IGBT (High switching speed Low tail current Latch-up free Avalanche rated) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUP309 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! BUP 309
IGBT
Preliminary data
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
• Low forward voltage drop
Remark: The TO-218 AB case doesn't solve the
standards VDE 0110 and UL 508 for creeping distance
Type
BUP 309
VCE IC
1700V 25A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
EAS
Ptot
Tj
Tstg
Semiconductor Group
1
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67078-A4204-A2
Values
1700
Unit
V
1700
± 20
25
16
A
50
32
mJ
23
310
-55 ... + 150
-55 ... + 150
W
°C
Jul-30-1996
1 page Package Outlines
Dimensions in mm
Weight: 8 g
BUP 309
Semiconductor Group
5
Jul-30-1996
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BUP309.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUP300 | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) | Siemens Semiconductor Group |
BUP302 | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) | Siemens Semiconductor Group |
BUP303 | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) | Siemens Semiconductor Group |
BUP304 | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) | Siemens Semiconductor Group |
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