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Número de pieza | BUK9515 | |
Descripción | TrenchMOS transistor Logic level FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUK9515 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9515-100A
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench’
technology which features very low
on-state resistance. It is intended for
use in automotive and general
purpose switching applications.
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 5 V
VGS = 10 V
MAX.
100
75
230
175
15
14.4
PIN CONFIGURATION
SYMBOL
d
tab
1 23
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
±VGSM
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
-
RGS = 20 kΩ
-
tp≤50µS
ID
ID
IDM
Ptot
Tstg, Tj
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
100
100
10
15
75
53
240
230
175
TYP.
-
60
MAX.
0.65
-
UNIT
V
A
W
˚C
mΩ
mΩ
UNIT
V
V
V
V
A
A
A
W
˚C
UNIT
K/W
K/W
December 1998
1
Rev 1.100
1 page Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9515-100A
15 RDS(ON)/mOhm
14.5
14
13.5
13
12.5
12
11.5
11
10.5
3 4 5 6 7 8 9 10
VGS/V
Fig.7. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(VGS); conditions: ID = 25 A;
100
ID/A
80
60
40
Tj/C = 175
25
20
0
0 0.5 1 1.5 VGS/V 2 2.5 3 3.5
Fig.8. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
150
gfs/S
100
50
0
0 20 40 ID/A 60 80 100
Fig.9. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
3a
Rds(on) normalised to 25degC
2.5
2
1.5
1
0.5
-100
-50
0 50 100 150 200
Tmb / degC
Fig.10. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V
VGS(TO) / V
2.5
max.
2
typ.
1.5
min.
1
BUK959-60
0.5
0
-100
-50
0 50
Tj / C
100 150 200
Fig.11. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2% typ 98%
1E-04
1E-05
1E-05
0 0.5 1 1.5 2 2.5
Fig.12. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
3
December 1998
5
Rev 1.100
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet BUK9515.PDF ] |
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