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PDF MMBTA43 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA43 | |
| Descripción | NPN Transistor | |
| Fabricantes | JinYu | |
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MMBTA43
TRANSISTOR(NPN)
SOT–23
FEATURES
High Voltage Application
Telephone Application
Complementary to MMBTA93
MARKING:ABX
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
200
VCEO Collector-Emitter Voltage
200
VEBO Emitter-Base Voltage
5
IC Collector Current
500
PC Collector Power Dissipation
350
RΘJA Thermal Resistance From Junction To Ambient
357
Tj Junction Temperature
Tstg Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA, IE=0
200
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
200
V
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA, IC=0
5
V
hFE(1)* VCE=10V, IC=10mA
40
DC current gain
hFE(2)* VCE=10V, IC=1mA
40
hFE(3)* VCE=10V, IC=30mA
40
Collector-emitter saturation voltage
VCE(sat)* IC=20mA, IB=2mA
0.5 V
Base-emitter saturation voltage
VBE(sat)* IC=20mA, IB=2mA
0.9 V
Transition frequency
fT VCE=20V,IE=10mA, f=100MHz 50
MHz
Collector output capacitance
Cob VCB=20V, IE=0, f=1MHz
4 pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
JinYu
semiconductor
www.htsemi.com
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