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PDF MMBTA42 Data sheet ( Hoja de datos )

Número de pieza MMBTA42
Descripción NPN Transistor
Fabricantes Rectron 
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MMBTA42
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* High breakdown voltage
* Low collector-emitter saturation voltage
* Complementary to MMBTA92 (NPN)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
RATINGS
Collector Current-Continuous
Collector Power Dissipation
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
IC
PC
TJ
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC=100uA,IE=0)
Collector-emitter breakdown voltage (IC=1mA,IB=0)
Emitter-Base breakdown voltage (IE=100uA,IC=0)
Collector cut-off current (VCB=200V,IE=0)
Emitter cut-off current (VEB=5V,IC=0)
(VCE=10V,IC=1mA)
DC current gain
(VCE=10V,IC=10mA)
(VCE=10V,IC=30mA)
Collector-emitter saturation voltage (IC=20mA,IB=2mA)
Base-emitter saturation voltage (IC=20mA,IB=2mA)
Transition frequency (VCE=20V,IC=10mA,f=30MHz)
Note: "Fully ROHS Complant", "100% Sn plating (Pb-free)".
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
SOT-23
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) 1
0.071(1.80)
0.118(3.00)
3 0.110(2.80)
2
Dimensions in inches and (millimeters)
MIN.
300
300
5
-
-
60
100
60
-
-
50
VALUE
0.3
350
150
-55 to +150
TYP.
-
-
-
-
-
-
-
-
-
-
-
UNITS
A
mW
oC
oC
MAX.
-
-
-
0.25
0.1
-
200
-
0.2
0.9
-
UNITS
V
V
V
uA
uA
-
-
-
V
V
MHz
2007-5

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