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PDF MMBT589 Data sheet ( Hoja de datos )
| Número de pieza | MMBT589 | |
| Descripción | PNP Transistor | |
| Fabricantes | JinYu | |
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MMBT58 9
TRANSISTOR(PNP)
SOT-23
FEATURES
z High current surface mount PNP silicon switching transistor for
Load management in portable applications
MARKING :589
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
Value
-50
-30
-5
-1
310
403
150
-55-150
Units
V
V
V
A
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter Turn-on voltage
Transition frequency
Collector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
hFE1
hFE2
hFE3
hFE4
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)
VBE(on)
fT
Cob
Test conditions
IC=-100μA,IE=0
IC=-10mA,IB=0
IE=-100μA,IC=0
VCB=-30V,IE=0
VCES=-30V
VEB=-4V,IC=0
VCE=-2V,IC=-1mA
VCE=-2V,IC=-500mA
VCE=-2V,IC=-1A
VCE=-2V,IC=-2A
IC= -500mA, IB=-50mA
IC= -1A, IB=-100mA
IC= -2A, IB=-200mA
IC= -1A, IB=-100mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-100mA ,
f =100MHz
f=1MHz
MIN
-50
-30
-5
100
100
80
40
100
TYP MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
300
-0.25
-0.3
-0.65
-1.2
-1.1
V
V
V
V
V
MHz
15 pF
JinYu
semiconductor
www.htsemi.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT589.PDF ] | |
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