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Número de pieza | SI2306 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | MCC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SI2306 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Features
omponents
20736 Marilla Street Chatsworth
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SI2306
• Halogen free available upon request by adding suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• High dense cell design for extremely low RDS(ON)
• Rugged and reliable
• Lead free product is acquired
• SOT-23 Package
• Marking Code: S6
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
IS
R©JA
PD
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous9(Note:1,2)
Drain Current-Pulsed
Gate-source Voltage
Source Current-Continuoud(Note:1,2)
Thermal Resistance Junction to Ambient
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Rating
30
3.16
20
f 20
0.62
100
0.75
-55 to +150
-55 to +150
Note1: Surface Mounted on 1"x1" FR4 board, t<5s
Note2: Pulse width limited by maximum junction temperature.
Unit
V
A
A
V
A
к/W
W
к
к
Internal Block Diagram
D
G
S
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
CB
2. SOURCE
3. DRAIN
12
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .104
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 3
2014/06/27
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet SI2306.PDF ] |
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