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PDF 2SK3018 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3018 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Galaxy Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3018 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Production specification
N-Channel Enhancement Mode Field Effect Transistor
2SK3018
FEATURES
z Low on-resistance.
z Fast switching speed.
z Low voltage drive(2.5V)makes this
Device ideal for portable equipment.
z Easily designed drive circuits.
z Easy to parallel.
Pb
Lead-free
APPLICATIONS
z Interfacing,switching (30V,100mA)
ORDERING INFORMATION
Type No.
Marking
2SK3018
KN
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
30
VGSS
ID
IDP*1
IDR
IDRP*1
PD*2
Gate -Source voltage
±20
drain current
Reverse drain current
Continuous 100
Pulsed
200
Continuous 100
Pulsed
200
Total Power Dissipation(TC=25℃)
200
Tch, Tstg
Channel and Storage Temperature
-55 to +150
*1Pw≤10us,Duty cycle≤50%
*2With each pin mounted on the recommended lands.
Units
V
V
mA
mA
mW
℃
C174
Rev.A
www.gmicroelec.com
1
1 page  
Production specification
N-Channel Enhancement Mode Field Effect Transistor
2SK3018
SOLDERING FOOTPRINT
0.95 0.95
2.00
0.90
0.80
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
2SK3018 SOT-23
3000/Tape&Reel
C174
Rev.A
www.gmicroelec.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2SK3018.PDF ] | |
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