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PDF MBRF20200CT Data sheet ( Hoja de datos )

Número de pieza MBRF20200CT
Descripción Schottky Power Rectifier
Fabricantes ON Semiconductor 
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MBRF20200CT
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metaltosilicon power diode.
Stateoftheart geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very lowvoltage, highfrequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Guardring for Stress Protection
Epoxy Meets UL 94 V0 @ 0.125 in
Electrically Isolated. No Isolation Hardware Required.
PbFree Package is Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 200 VOLTS
1
2
3
1 23
ISOLATED TO220
CASE 221D
STYLE 3
MARKING DIAGRAM
AYWW
B20200G
AKA
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
August, 2008 Rev. 7
1
A
Y
WW
B20200
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= PbFree Package
= Polarity Designator
ORDERING INFORMATION
Device
Package
Shipping
MBRF20200CT TO220
50 Units/Rail
MBRF20200CTG TO220
(PbFree)
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBRF20200CT/D

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