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PDF MBRF20100CT Data sheet ( Hoja de datos )
| Número de pieza | MBRF20100CT | |
| Descripción | Schottky Diodes | |
| Fabricantes | Kexin | |
| Logotipo |  |
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DIP Type
Schottky Diodes
MBRF20100CT
Diodes
■ Features
● Low forward voltage drop
● High frequency properties and switching speed
● Guard ring for over-voltage protection
1. Anode 2.Cathode 3. Anode
TO-220F
10.16 0.20
(7.00)
ø3.18 0.10
Unit:mm
2.54 0.20
(0.70)
(1.00x45 )
MAX1.47
0.80 0.10
0.35 0.10
#1
2.54TYP
[2.54 0.20]
2.54TYP
[2.54 0.20]
9.40 0.20
0.50
+0.10
–0.05
2.76 0.20
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Reverse Voltage
DC Reverse Voltage
DC Forward Current
Tc = 105℃
Peak forward surge current @ 60Hz Sine Half-Sine Wave
Thermal Resistance, Junction to Case (per diode)
Junction Temperature
Storage temperature range
Symbol
VRRM
VR
IF(AV)
IFSM
RθJC
TJ
Tstg
Rating
100
100
20
150
2.8
150
-65 to 150
Unit
V
A
°C/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage (Note.1)
Reverse voltage leakage current (Note.1)
Symbol
Test Conditions
VRM ID= 200uA
IF= 10 A ,Tc=25℃
IF= 10 A ,Tc=125℃
VF
IF= 20 A ,Tc=25℃
IF= 20 A ,Tc=125℃
Tc= 25 ℃
IR
Tc=125℃
Note.1: Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Min Typ Max Unit
100 V
770
650
mV
950
750
0.1
mA
20
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