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Número de pieza | 2N6674 | |
Descripción | NPN High Power Silicon Transistor | |
Fabricantes | MA-COM | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N6674 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 2N6674 & 2N6675
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/537
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Test Conditions
IC = 200 mAdc
2N6674
2N6675
Symbol Units Min.
V(BR)CEO Vdc
300
400
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
Collector - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Sustaining Voltage
Base - Emitter Saturation Voltage
Dynamic Characteristics
Small-Signal Short-Circuit
Forward Current Transfer Ratio
VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6674
VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6675
VEB = 7 Vdc
VCB = 450 Vdc, 2N6674
ICEX Adc
IEBO mAdc
ICBO mAdc
—
—
—
IC = 1 Adc, VCE = 3 Vdc
IC = 10 Adc, VCE = 2 Vdc
IC = 10 Adc, IB = 2 Adc
IC = 15 Adc, IB = 5 Adc
IC = 1 Adc, IB = 2 Adc
HFE -
VCE(SAT) Vdc
VBE(SAT) Vdc
15
8
—
—
IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz | HFE | -
3
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF
150
Max.
—
0.1
2.0
1.0
40
20
1.0
5.0
1.5
10
500
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
1
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DC-0013437
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2N6674.PDF ] |
Número de pieza | Descripción | Fabricantes |
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2N6671 | Bipolar NPN Device | Seme LAB |
2N6672 | HIGH VOLTAGE NPN TYPES FOR OFF LINE POWER SUPPLIES AND OTHER HIGH VOLTAGE SWITCHING APPLICATIONS | ETC |
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