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Datasheet 2N6078 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N6078 | NPN MULTI - EPITAXIAL POWER TRANSISTOR 2N6078
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500)
MECHANICAL DATA Dimensions in mm(inches)
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
4.83 (0.190) 5.33 (0.210)
9.14 (0.360) min.
1.27 (0.0 |  Seme LAB | transistor |
| 2 | 2N6078 | High Voltage Power Transistor |  Solid State | transistor |
| 3 | 2N6078 | Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6077 2N6078 2N6079
DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For horizontal deflection output stages of TV’s and CRT’s
PINNING PI |  SavantIC | transistor |
| 4 | 2N6078 | Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-66 |  New Jersey Semiconductor | data |
| 5 | 2N6078AT | Trans GP BJT NPN 250V 7A 3-Pin(2+Tab) TO-66 | New Jersey Semiconductor | data |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact  Unisonic Technologies mosfet | | |
| 2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
| 3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
| 4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
| 5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
| 6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte  Central Semiconductor transistor | | |
| 7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge  ON Semiconductor transistor | | |
| 8 | 2N6027 | PROGRAMMABLE UNIJUNCTION TRANSISTOR ETC transistor | | |
| 9 | 2N6027 | Thyristor PUT 40V 5A 3-Pin TO-92 New Jersey Semiconductor thyristor | |
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| Número de pieza | Descripción | Fabricantes | |
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