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Main Product Characteristics:
VDSS
RDS(on)
50V
1.4Ω (typ.)
ID 0.2A
SOT-323
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
ESD Rating:1000V HBM
150℃ operating temperature
BSS138W
Marking and Pin
Assignment
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
0.2
0.8
0.2
50
± 20
-55 to +150
Symbol
Characteristics
Typ.
Max.
RθJA Junction-to-ambient (t ≤ 10s) ④
— 625
Units
A
W
V
V
°C
Units
℃/W
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 1 of 6
Ordering and Marking Information
Device Marking: 138W
Package (Available)
SOT-323
Operating Temperature Range
C : -55 to 150 ºC
BSS138W
Devices per Unit
Package Units/
Type
Tape
SOT-323 3000
Tapes/Inner
Box
10
Units/Inner
Box
30000
Inner
Boxes/Carton
Box
12
Units/
Carton
Box
360000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
Tj=150℃ @ 100% of
Max VGSS
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 5 of 6