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Número de pieza | MCR25M | |
Descripción | Silicon Controlled Rectifiers | |
Fabricantes | Motorola Semiconductors | |
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No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS
• High Surge Current Capability — 300 Amperes
• Industry Standard TO–220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity
Order this document
by MCR25/D
MCR25
SERIES*
*Motorola preferred devices
SCRs
25 AMPERES RMS
400 thru 800
VOLTS
A
K
A
G
CASE 221A–06
(TO-220AB)
Style 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125°C)
MCR25D
MCR25M
MCR25N
VDRM
VRRM
Volts
400
600
800
On-State RMS Current
(All Conduction Angles)
IT(RMS)
25 A
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
300 A
373 A2sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
20.0
0.5
2.0
– 40 to +125
– 40 to +150
Watts
Watts
A
°C
°C
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.5 °C/W
62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
TL
260 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
1 page PACKAGE DIMENSIONS
MCR25 SERIES
B
Q
H
Z
4
1 23
L
V
G
N
F
T
–T–
SEATING
PLANE
C
S
A
U
K
R
J
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
D
CASE 221A–06
(TO-220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 –––
Z ––– 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 –––
––– 2.04
Motorola Thyristor Device Data
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MCR25M.PDF ] |
Número de pieza | Descripción | Fabricantes |
MCR25 | Silicon Controlled Rectifiers | Motorola Semiconductors |
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