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PDF MMBT5401 Data sheet ( Hoja de datos )
| Número de pieza | MMBT5401 | |
| Descripción | PNP Plastic-Encapsulate Transistors | |
| Fabricantes | HOTTECH | |
| Logotipo |  |
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Plastic-Encapsulate Transistors
FEATURES
Complementary to MMBT5551
Ideal for medium power amplification and switching
MMBT5401 (PNP)
MARKING: 2L
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-160
VCEO
-150
VEBO
-5
IC -0.6
PC 0.3
TJ 150
Tstg -55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions Min
Collector-base breakdown voltage
VCBO IC= -100μA, IE=0
-160
Collector-emitter breakdown voltage
VCEO IC= -1mA, IB=0
-150
Emitter-base breakdown voltage
VEBO IE= -10μA, IC=0
-5
Collector cut-off current
Emitter cut-off current
ICB
O
IEB
O
hFE1
VCB=-120 V , IE=0
VEB=-4V , IC=0
VCE= -5V, IC= -1mA
80
DC current gain
hFE2 VCE= -5V, IC=-10mA 100
hFE3 VCE= -5V, IC=-50mA 50
Collector-emitter saturation voltage
VCE(sat) IC=-50 mA, IB= -5mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC= -50 mA,
V-5CmEA= -5V,
-10mA
IB=
IC=
f=30MHz
100
Max Unit
V
V
V
-0.1 μA
-0.1 μA
300
-0.5 V
-1 V
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT5401.PDF ] | |
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