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PDF MMBT5401 Data sheet ( Hoja de datos )
| Número de pieza | MMBT5401 | |
| Descripción | PNP Silicon General PurposeTransistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
MMBT5401
PNP Silicon
General PurposeTransistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Ideal for medium power amplification and switching
MARKING
2L
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current - Continuous
Symbol Ratings
VCEO
VCBO
VEBO
IC
-150
-160
-5.0
-500
Unit
V
V
V
mA
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80
2.25
1.20
3.00
2.55
1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
THERMAL CHARACTERISTICS
Parameter
Symbol
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Junction, Storage Temperature
TA = 25°C
Derate above 25°C
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD
RθJA
PD
RθJA
TJ, TSTG
Ratings
225
1.8
556
300
2.4
417
-55 ~ +150
Unit
mW
mW / ℃
℃/W
mW
mW / ℃
℃/W
℃
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Test Conditions
Symbol
Off Characteristics
Collector–Emitter Breakdown Voltage
IC = -1.0 mA, IB = 0
BVCEO
Collector–Base Breakdown Voltage
IC = -100 μA, IE = 0
BVCBO
Emitter–Base Breakdown Voltage
IE = -10 μA, IC = 0
BVEBO
Collector Cutoff Current
On Characteristics
VCB = -120 V, IE = 0
VCB = -120 V, IE = 0, TA = 100°C
ICES
DC Current Gain
IC = –1.0 mA, VCE = –5.0 V
IC = –10 mA, VCE = –5.0 V
IC = –50 mA, VCE = –5.0 V
hFE
Collector–Emitter Saturation Voltage
IC = –10 mA, IB = –1.0 mA
IC = –50 mA, IB = –5.0 mA
VCE(sat)
Min.
-150
-160
-5.0
-
80
100
50
-
Max.
-
-
-
-100
-100
-
200
-
-0.2
-0.5
Unit
V
V
V
nA
μA
-
V
Base–Emitter Saturation Voltage
Small Signal Characteristics
IC = –10 mA, IB = –1.0 mA
IC = –50 mA, IB = –5.0 mA
VBE(sat)
-
-1.0
-1.0
V
Current-Gain - Bandwidth Product
IC =-10 mA, VCE = -10 V, f = 100 MHz
fT
100
-
MHz
Output Capacitance
VCB = -10 V, IE = 0, f = 1.0 MHz
COBO
-
6.0
pF
Small Signal Current Gain
IC = -1.0 mA, VCE =-10 V, f = 1.0 kHz
hFE
50
200
-
Noise Figure
IC = –200 μA, VCE = –5.0 V, RS = 10 Ω, f = 1.0 kHz
NF
-
8.0
dB
Note:
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
01-June-2002 Rev. A
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MMBT5401.PDF ] | |
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