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PDF MMBT5087 Data sheet ( Hoja de datos )
| Número de pieza | MMBT5087 | |
| Descripción | PNP Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
PNP Transistors
MMBT5087 (KMBT5087)
■ Features
● Collector Current Capability IC=-100mA
● Collector Emitter Voltage VCEO=-50V
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-50
-50
-3
-100
350
2.8
357
150
-65 to 150
Unit
V
mA
mW
mW/℃
℃/W
℃
www.kexin.com.cn 1
1 page  
SMD Type
Transistors
■ Typical Characterisitics
PNP Transistors
MMBT5087 (KMBT5087)
1,000,000
100,000
10,000
1,000
4.06.d01B0dBdB
V CE = - 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz
4.0 dB
106d.0BdB
100
0.001
0.01 0.1
I C - COLLECTOR CURRENT (mA)
1
10,000
5,000
2,000
1,000
500
4.0 dB
6.0 dB
V CE = - 5V
200
f = 10 MHz
BANDWIDTH
= - 2 kHz
100
0.01
0.1
1
I C - COLLECTOR CURRENT (mA)
Figure 15. BContours of Constant
Narrow Band Noise Figure
Figure 16. Contours of Constant
Narrow Band Noisd Figure
10
1.6
1.4 h fe and h ie
1.2
1
0.8
f = 1.0 kHz
0.6 I C= 1.0 mA
TA = -25°C
hoe
0.4
0
-5 -10 -15 -20
V CE- COLLECTOR-EMITTE R VOLTAGE (V)
-25
Typical Common Emitter Characteristics
100
hoe
10
h fe
1
0.1 f = 1.0 kHz
VCE = -5.0V
TA = -25°C
h ie
0.01
0.1
0.2
0.5 1
2
5
I C - COLLECTOR CURRE NT (mA)
10
Typical Common Emitter Characteristics
2 VCE = -5.0V
1.8 I C= 1.0 mA
f = 1.0 kHz
1.6
h ie
1.4
1.2
1 h fe and hoe
0.8
0.6 h ie
h fe
hoe
0.4
-60
-40 -20 0 20 40 60 80
T A - AMBIE NT TEMP ERATURE ( °C)
100
Typical Common Emitter Characteristics
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MMBT5087.PDF ] | |
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